gallium phosphide造句
造句与例句手机版
- Typical crystal materials are zinc telluride, gallium phosphide, and gallium selenide.
- Gallium phosphide has applications in optical systems.
- It is often grown on gallium phosphide substrates to form a GaP / GaAsP heterostructure.
- At temperatures above ~ 900 癈, gallium phosphide dissociates and the phosphorus escapes as a gas.
- Early in his career, Henry identified the source of red light emission in gallium phosphide LEDs.
- These use a combination of several layers of gallium arsenide, indium gallium phosphide, and germanium to capture more energy from the solar spectrum.
- The device was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, and emitted infrared photons from the base layer.
- Alloys of Indium gallium phosphide in the range In . 5 Ga . 5 P through In . 53 Ga . 47 P serve as the high band gap alloy.
- Triple junction cells consisting of indium gallium phosphide ( InGaP ), gallium arsenide ( GaAs ) or indium gallium arsenide ( InGaAs ) and germanium ( Ge ) can be fabricated on germanium wafers.
- The electrons dissipate energy in the form of heat for silicon and germanium diodes but in gallium arsenide phosphide ( GaAsP ) and gallium phosphide ( GaP ) semiconductors, the electrons dissipate energy by emitting photons.
- It's difficult to see gallium phosphide in a sentence. 用gallium phosphide造句挺难的
- As with a light emitting transistor, the transistor laser was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, but emitted a coherent beam by stimulated emission, which differed from their previous device that only emitted incoherent photons.
- The device was initially constructed out of layers of indium gallium phosphide, gallium arsenide, and indium gallium arsenide, which prevented the device from running without being cooled with liquid nitrogen . and continuous wave operation ( continuously emitting light ) at 3 GHz.
- Later, dual-and triple-junction solar cells based on GaAs with germanium and indium gallium phosphide layers were developed as the basis of a triple-junction solar cell, which held a record efficiency of over 32 % and can operate also with light as concentrated as 2, 000 suns.
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